Semiconductor laser having a high-reflectivity reflector on the

Details Semiconductor laser having a high-reflectivity reflector on the Semiconductor laser having a high-reflectivity reflector on the

1997-10-10

1999-06-22

Bovernick, Rodney

Coherent light generators

Particular active media

Semiconductor

372 99, H01S 319

Patent

active

059149779

ABSTRACT:
A reflection multilayer including low-refraction layers and semiconductor layers is formed on the facets of a semiconductor laser. The bandgap energy (Ewg) of a waveguide layer of the reflection multilayer is greater than the bandgap energy (Eac) of an active layer of the semiconductor laser (Eac<Ewg), while the thickness (Twg) of the former is smaller than the thickness (Tac) of the latter (Tac>Twg). Further, a photodetector and an optical modulator are formed on the semiconductor laser with the reflection multilayer thereon by butt-Jointing or monolithically by selective vapor growth with use of selective growth masks. Relations Ewg>Emod>Eac>Epd and Twg>Tmod>Tac>Tpd are established between the respective bandgap energies and thicknesses of individual layers, whereby the absorption rate of the reflector waveguide layer and diffraction loss are lowered or reduced, and the rates of optical absorption in an optical absorption layer of the photodetector are increased.

REFERENCES:
patent: 4286838 (1981-09-01), Huignard et al.
patent: 4675873 (1987-06-01), Miller
patent: 4845725 (1989-07-01), Welch et al.
patent: 5022038 (1991-06-01), Bradley
patent: 5185754 (1993-02-01), Craig et al.

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