Coherent light generators – Particular active media – Semiconductor
Patent
1992-07-22
1993-12-14
Epps, Georgia Y.
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
052710289
ABSTRACT:
A semiconductor laser device which can effectively confine electrons and positive holes is disclosed. The semiconductor laser device includes a semiconductor substrate of a first conductivity type, a current blocking layer of a second conductivity type, a first semiconductor layer of the first conductivity type made of a III-V group compound semiconductor, an active layer made of a III-V group compound semiconductor, and a second semiconductor layer. The semiconductor substrate has a ridge-type mesa having (n11)A planes. The current blocking layer is formed on the semiconductor substrate other than the top face of the mesa. The first semiconductor layer is formed on the entire surface of the current blocking layer and on the top face of the mesa. The active layer is formed on the first semiconductor layer. The second semiconductor layer is formed on the active layer. The second semiconductor layer has inclined portions, and is made of a III-V group compound semiconductor containing an amphoteric element as an impurity so that the inclined portions are of the first conductivity type and the other portions are of the second conductivity type.
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Hata Toshio
Hosoba Hiroyuki
Kaneiwa Shinji
Kondo Masafumi
Matsui Sadayoshi
Epps Georgia Y.
Sharp Kabushiki Kaisha
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