Process for forming a novel buried interconnect structure for se

Details Process for forming a novel buried interconnect structure for se Process for forming a novel buried interconnect structure for se

1993-04-26

1994-04-26

Quach, T. N.

Fishing, trapping, and vermin destroying

437 41, 437193, 437200, 437239, H01L 21283, H01L 21335

Patent

active

053066677

ABSTRACT:
An improved density semiconductor device having a buried interconnect is described. The buried interconnect incorporates an elevated source/drain structure formed by selective poly-epi silicon growth and silicidized source/drain/gate interconnect segments. First, a buried conductor is formed over an oxidized portion of a first field oxide. A layer of selective poly-epi silicon is then grown over the surface of the substrate. At least some of the selective poly-epi silicon layer is then oxidized. A layer of refractory metal is then deposited, annealed, and etched to complete the buried interconnect.

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