Fast recovery diode with very thin base

Details Fast recovery diode with very thin base Fast recovery diode with very thin base

1978-11-14

1980-09-02

Edlow, Martin H.

357 14, 357 86, H01L 2906

Patent

active

042209633

ABSTRACT:
A fast recovery diode consists of a relatively thick wafer of monocrystalline silicon material which has a relatively deep central well therein. The central well defines a relatively thin intermediate base region for the diode which is surrounded by a relatively thick rim region which imparts physical strength to the wafer. The upper periphery of the rim is surrounded by a conductivity-type material which is opposite to that of the base, but is short-circuited by the contact on the well side of the wafer.

REFERENCES:
patent: 3317746 (1967-05-01), Hutson
patent: 3453508 (1969-07-01), Weinstein
patent: 3553536 (1971-01-01), Neilson
patent: 4109274 (1978-08-01), Belenkov

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