Patent
1978-12-19
1980-09-02
Wojciechowicz, Edward J.
357 59, 357 92, H01L 2702
Patent
active
042209617
ABSTRACT:
In the production of integrated I.sup.2 L-circuits, a lateral transistor and a vertical transistor are generated next to one another on the surface of a monocrystalline semiconductor body. Thereby, it is seen to that the base zone of the vertical transistor coincides with the collector zone of the lateral transistor and the base zone of the lateral transistor coincides with the emitter zone of the vertical transistor. Further, it is known to provide at least one collector zone of monocrystalline semiconductor material belonging to the vertical transistor and marked off from the base zone of this transistor by a pn-junction and to provide a Schottky contact as collector electrode.
The invention makes provisions for applying a polycrystalline layer of the same semiconductor material and the doping of the collector zone on the surface of the monocrystalline collector zone and then making this the carrier of the collector electrode or collector electrodes, respectively.
In addition to reducing the effort otherwise required, an increase of the component density as well as a series of structural improvements can be attained.
REFERENCES:
Jour. Solid State Circuits--Oct. 1975, vol. SC-10, pp. 343-348 "Schottky 12L"--Hewlett.
IEEE Inter. Solid State Circuits Conf.--Feb. 1975, pp. 172-173.
Siemens Aktiengesellschaft
Wojciechowicz Edward J.
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