Method for manufacturing insulated gate field effect transistor

Details Method for manufacturing insulated gate field effect transistor Method for manufacturing insulated gate field effect transistor

1993-01-21

1994-04-26

Fourson, George

Fishing, trapping, and vermin destroying

437 44, 148DIG126, 257346, H01L 21336

Patent

active

053066545

ABSTRACT:
An insulated gate field effect transistor having a stable threshold voltage controlled with a good accuracy and a method for manufacturing the same is disclosed. The method for manufacturing a field effect transistor is such that doping a gate electrode with a P-type dopant is carried out after introducing an N-type dopant to a base layer for forming a contact region. The field effect transistor has sources having an extended portion extending into an upper portion of the contact region.

REFERENCES:
patent: 4757032 (1988-07-01), Contiero
patent: 4974059 (1990-11-01), Kinzer
patent: 5084401 (1992-01-01), Hagino
patent: 5124272 (1992-06-01), Saito et al.
patent: 5171705 (1992-12-01), Choy
Extended Abstracts (The 38th Spring Meeting, 1991); No. 2, p. 582 and translation thereof (The Japan Society of Applied Physics and Related Societies).

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