Method of making silicon MESFET for dielectrically isolated inte

Details Method of making silicon MESFET for dielectrically isolated inte Method of making silicon MESFET for dielectrically isolated inte

1990-10-31

1994-04-26

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 62, 257280, H01L 21265

Patent

active

053066502

ABSTRACT:
A MESFET wherein a Schottky top gate which extends across the channel region between the source and drain regions and beyond sides of the dielectric isolation in which the device is built at two points. The bottom gate also extends beyond the dielectric isolation below the surface of the island and intersects the bottom of the source and drain regions. Where a bottom gate contact region forms an annulus encompassing the source and drain, the top gate extends across the channel and only onto sides of the bottom gate contact region at two points. The source and drain regions which are formed are sufficiently spaced from the dielectric isolation so as not to effect the I.sub.DSS resulting from variation in the island size.

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"Self Isolating Bathtub Collector For A Planar Transistor", by J. E. Ziegler, et al.; IBM Bulletin, vol. 14, No. 5, Oct. 1971.

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