Arc chamber for an ion implantation system

Details Arc chamber for an ion implantation system Arc chamber for an ion implantation system

1998-01-05

1999-06-22

Berman, Jack I.

Radiant energy

Irradiation of objects or material

Irradiation of semiconductor devices

250423R, 31511181, H01J 37317, H01J 3708

Patent

active

059144947

ABSTRACT:
The present invention relates to the fabrication of materials and structures having selected mechanical, thermal and electrical properties. More particularly, the invention relates to the use of these materials and structures in ion implantation systems. Structures comprising boron material provide components for use in implanters including arc chambers with which a beam of ions is generated for implantation into a target such as a semiconductor wafer.

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