Process for forming self-aligned titanium silicide by heating in

Details Process for forming self-aligned titanium silicide by heating in Process for forming self-aligned titanium silicide by heating in

1990-03-21

1994-02-22

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 40, 437189, 148DIG141, 148DIG147, H01L 2144

Patent

active

052886662

ABSTRACT:
A process for producing self-aligned titanium silicide. A silicon substrate is provided, silicon electrode and oxide insulator regions are formed on the substrate, and a titanium layer overlying the electrode and insulator regions is formed. The device is heated in an oxygen rich environment to form titanium silicide overlying the electrode regions and to form titanium oxide overlying the insulator regions and metal silicide.

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