Active solid-state devices (e.g. – transistors – solid-state diode – Gate arrays – Having specific type of active device
Patent
1995-05-05
1997-03-18
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Gate arrays
Having specific type of active device
257211, H01L 2710
Patent
active
056125534
ABSTRACT:
A semiconductor integrated circuit including a transistor portion having operating characteristics which are not varied by wiring operation, and a method of fabricating the same are disclosed. A PMOS transistor portion (PT) includes first layer metal lines (7A) extending outwardly beyond P-type diffused regions (3) and permitted to have contact holes (6) therein over regions external to the P-type diffused regions (3). That is, the first layer metal lines (7A) have out-of-diffused-region connecting regions for electrical connection over the regions external to the P-type diffused regions (3). Likewise, an NMOS transistor portion (NT) includes first layer metal lines (7A) extending outwardly beyond N-type diffused regions (5) and permitted to have contact holes (6) therein over regions external to the N-type cliffused regions (5).
REFERENCES:
patent: 5217915 (1993-06-01), Hashimoto et al.
Nikkei Microdevices, Jun. 1989, pp. 86-101, "200,000 Gate Class Overall Sea Of Gate; Favorite Of Large-Scale Gate Array Which Is Waiting Its Turn".
Mitsubishi Denki & Kabushiki Kaisha
Prenty Mark V.
LandOfFree
Semiconductor integrated circuit and method of fabricating same does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Semiconductor integrated circuit and method of fabricating same , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor integrated circuit and method of fabricating same will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1707999