Silicon nitride sidewall and top surface layer separating conduc

Details Silicon nitride sidewall and top surface layer separating conduc Silicon nitride sidewall and top surface layer separating conduc

1997-04-25

1999-06-22

Powell, William

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438692, 438696, 438733, 438744, 252 791, 257752, 257758, H01L 2100

Patent

active

059142790

ABSTRACT:
An integrated circuit includes a conductive structure (66) is formed with a top layer of silicon nitride (62) and silicon nitride (70) sidewalls on a semiconductor substrate. The layer of silicon nitride (70) covering the sidewalls of the conductive structure (66) intersect with the layer of silicon nitride on top of the conductive structure with a relatively square shoulder. A subsequently deposited conductor makes contact with the surface of the semiconductor substrate (56) without shorting to the conductive structure (66) on the semiconductor substrate.

REFERENCES:
patent: 5691219 (1997-11-01), Kawakubo et al.

Affiliated with

Also associated with

Rating

Silicon nitride sidewall and top surface layer separating conduc does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Silicon nitride sidewall and top surface layer separating conduc, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Silicon nitride sidewall and top surface layer separating conduc will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1707961