Method of making semiconductor integrated circuit device includi

Details Method of making semiconductor integrated circuit device includi Method of making semiconductor integrated circuit device includi

1992-07-20

1994-02-22

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 53, 437 59, H01L 21265

Patent

active

052886514

ABSTRACT:
A semiconductor integrated circuit device includes bipolar transistors, MOS FETs and a CCD in and on only one semiconductor substrate. At least emitter electrode wiring layers of bipolar transistors and one group of transfer electrode wiring layers of the CCD have a stacked structure with a low resistivity which includes a first layer of doped polysilicon and a second layer of metal silicide. These electrodes wiring layers are provided at the same time by successively depositing first and second layers on the semiconductor substrate and patterning the deposited layers.

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