Method of obtaining high quality silicon dioxide passivation on

Details Method of obtaining high quality silicon dioxide passivation on Method of obtaining high quality silicon dioxide passivation on

1994-12-09

1997-03-18

Dang, Trung

Fishing, trapping, and vermin destroying

437100, 437234, 437240, 437243, 148DIG148, H01L 2102

Patent

active

056122608

ABSTRACT:
A method of obtaining high quality passivation layers on silicon carbide surfaces by oxidizing a sacrificial layer of a silicon-containing material on a silicon carbide portion of a device structure to substantially consume the sacrificial layer to produce an oxide passivation layer on the silicon carbide portion that is substantially free of dopants that would otherwise degrade the electrical integrity of the oxide layer.

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SiC Electronics For High Temperature Control Systems, D. M. Brown et al., (4pages), presented at GOMAC-91, Nov. 4-7, 1991, Orlando, FL.

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