Active solid-state devices (e.g. – transistors – solid-state diode – Heterojunction device
Patent
1997-05-22
1998-11-24
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Heterojunction device
257184, 257194, 257197, 257201, H01L 310328, H01L 310336, H01L 31072, H01L 31109
Patent
active
058411569
ABSTRACT:
A semiconductor device includes a GaAs substrate having a lattice constant; and a III-V mixed crystal semiconductor layer disposed on the GaAs substrate, containing Tl (thallium) and Ga (gallium) as Group III elements and As (arsenic) as a Group V element, and having a lattice constant larger than the lattice constant of the GaAs substrate. Therefore, the lattice mismatch of the III-V mixed crystal semiconductor layer with GaAs and the band gap energy of the III-V mixed crystal semiconductor layer are smaller than those of an InGaAs layer, resulting in a semiconductor device with improved operating characteristics and reliability.
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Kajikawa Yasutomo
Kawazu Zempei
Mintel William
Mitsubishi Denki & Kabushiki Kaisha
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