Method of manufacturing semiconductor devices

Details Method of manufacturing semiconductor devices Method of manufacturing semiconductor devices

1994-05-03

1995-05-09

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437238, 437240, 148DIG118, H01L 2102

Patent

active

054139678

ABSTRACT:
An organic silane compound gas and an oxidizing gas are introduced into a reaction vessel from each gas source. Further a gas containing at least one kind of halogen, for example carbon tetrafluoride, is decomposed into halogen radicals, etc., by microwave discharge, and introduced into the reaction vessel. Reaction occurs between the gases, resulting in silicon oxide films being formed on substrates in the reaction vessel.

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Very Low Temperature CVD Of SiO.sub.2 Films Using Ozone And Organosilane, J. Sato et al., E.C.S. Spring Meeting, Abstract No. 9, May 1971, pp. 31-33.

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