Method for forming a contact of a semiconductor device

Details Method for forming a contact of a semiconductor device Method for forming a contact of a semiconductor device

1993-11-16

1995-05-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437189, 437228, 148DIG20, 148DIG50, H01L 2144, H01L 2148

Patent

active

054139619

ABSTRACT:
A method for forming contact of a semiconductor device which prevents residues of a conductive material due to high steps on an insulating layer between metal lines, and minimizes contact area, includes the steps of forming an impurity diffusion region on a predetermined portion of an isolation region on a substrate, forming a first insulating layer on the surface of the substrate, forming a first conductive pattern and a second insulating pattern on the upper portion of the first insulating layer, forming a barrier pattern on the upper portion of the second insulating pattern, forming a third insulating layer on the upper portion of the barrier pattern and the first insulating layer, and etching the third insulating layer to expose the upper portion of the barrier pattern, forming a photoresist pattern for contact mask on the surfaces of the barrier pattern and third insulating layer, etching the third insulating layer and first insulating layer exposed by the photoresist pattern to form a contact hole having a lower surface being the impurity diffusion region, forming a spacer along the sidewall of the contact hole, and forming a second conductive layer on the upper portion of the substrate having the contact hole and barrier layer, and patterning the second conductive layer.

REFERENCES:
patent: 5284787 (1994-02-01), Ahn

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