Method of modifying transparent conductive oxide film including

Details Method of modifying transparent conductive oxide film including Method of modifying transparent conductive oxide film including

1993-09-10

1995-05-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437181, 136256, H01L 3118, H01L 2714

Patent

active

054139597

ABSTRACT:
In a method of modifying a transparent conductive oxide film and in a method of manufacturing a photovoltaic device, a transparent conductive oxide film is irradiated with an energy beam for increasing the carrier concentration and thereby reducing the resistance of the transparent conductive oxide film.

REFERENCES:
patent: 4500743 (1985-02-01), Hayashi
patent: 4700463 (1987-10-01), Hama
patent: 4706376 (1987-11-01), Yamazaki et al.
patent: 4724011 (1988-02-01), Turner et al.
patent: 4824488 (1989-04-01), Sakai et al.
patent: 5057244 (1991-10-01), Nitta et al.
patent: 5217921 (1993-08-01), Kaido et al.
IEEE, 1988, "Hydrogen Plasma Durability of SnO.sub.2 : F Films for Use in a-Si Solar Cells" by Kazuo Sato et al.

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