Method of bonding silicon wafers at temperatures below 500 degre

Details Method of bonding silicon wafers at temperatures below 500 degre Method of bonding silicon wafers at temperatures below 500 degre

1993-12-21

1995-05-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437901, 437974, 148 332, 148DIG135, H01L 2120

Patent

active

054139554

ABSTRACT:
A process for silicon wafer-to-wafer bonding at temperatures lower than 500.degree. C. has been developed. It consists of (1) treating the cleaned surfaces to make them smooth and hydrophilic, (2) initiating the bond by making intimate contact between wafers and (3) enhancing the bond strength at elevated temperatures. This bonding process can be applied to sensor packaging.

REFERENCES:
patent: 5098861 (1992-03-01), Blackstone
patent: 5102821 (1992-04-01), Moslehi
patent: 5168078 (1992-12-01), Reisman et al.
patent: 5169472 (1992-12-01), Goebel
patent: 5260233 (1993-11-01), Buti et al.
patent: 5286670 (1994-02-01), Kang et al.
patent: 5290715 (1994-03-01), Pandya
Haisma et al., Jap. J. Appl. Phys. 28(8) pp. 1426-1433 (1989).
J. B. Lasky, "Wafer Bonding For Silicon-on-Insulator Technologies," Appl. Phys. Lett., 48 (1), 78, 1986.
R. Stengle, K. Y. Ahn and U. Gosele, "Bubble-Free Silicon Wafer Bonding in a Non-Cleanroom Environment," Jpn. J. Appl. Phys., 27, L2384, 1988.
W. P. Massara, G. Goetz, A. Caviglia and J. B. McKitterrick, "Bonding of Silicon Wafers for Silicon-on-Insulator," J. Appl. Phys., 64 (10), 4943, 1988.
K. Mitani and U. Gosele, "Wafer Bonding Technology for Silicon-on-Insulator Applications: A Review", J. Electronic Matl., 21, 669, 1992.
G. G. Goetz, "Semiconductor Wafer Bonding: Science, Technology, and Applications," p. 65, Ed. by W. Gosele, T. Abe, J. Haisoa and M. A. Schmidt, The Electrochemical Society, 1992.
E. Chason and T. M. Mayer, "Low Energy Ion Bombardment Induced Roughening and Smoothing of SiO.sub.2 Surfaces", Appl. Phys. Letter 62(4), 25 Jan. 1993, pp. 363-365.

Affiliated with

Also associated with

Rating

Method of bonding silicon wafers at temperatures below 500 degre does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of bonding silicon wafers at temperatures below 500 degre, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of bonding silicon wafers at temperatures below 500 degre will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1705095