Optimized container stacked capacitor DRAM cell utilizing sacrif

Details Optimized container stacked capacitor DRAM cell utilizing sacrif Optimized container stacked capacitor DRAM cell utilizing sacrif

1992-11-06

1993-12-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437 47, 437 48, 437 60, 437225, 437919, H01L 2170

Patent

active

052702413

ABSTRACT:
An existing stacked capacitor fabrication process is modified to construct a three-dimensional stacked container capacitor. The present invention develops the container capacitor by etching an opening (or contact opening) into a low etch rate oxide. The contact opening is used as a form for deposited polysilicon that conforms to the sides of the opening walls. Within the thin poly lining of the oxide container a high etch-rate oxide, such as ozone TEOS, is deposited over the entire structure thereby bridging across the top of the oxide container. The high etch-rate oxide is planarized back to the thin poly and the resulting exposed poly is then removed to separate neighboring containers. The two oxides, having different etch rates, are then etched thereby leaving a free-standing poly container cell with 100% (or all) of the higher etch rate oxide removed and a pre-determined oxide surrounding the container still intact.

REFERENCES:
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4944836 (1990-07-01), Beyer et al.
patent: 5045899 (1991-09-01), Arimoto et al.
"Stacked Capacitor DRAM Cell with Vertical Fins" IBM TDB, Jul. 1990, pp. 245-247.
"Crown-Shaped Stacked-Capacitor Cell for 1.5-V Operation 64-Mb Dram's" by T. Kaga et al., IEEE Transactions on Electron Devices, vol. 38, No. 2, Feb. 1991, pp. 255-261.
"A Stacked Capacitor Cell with Ring Structure" by N. Shinmura et al., pp. 833-836. (Extended abstracts of the 22rd International Conference on Solid State Devices, 1990).

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