Fishing – trapping – and vermin destroying
Patent
1992-08-19
1993-12-14
Thomas, Tom
Fishing, trapping, and vermin destroying
437 47, 437 60, 437919, H01L 2170
Patent
active
052702391
ABSTRACT:
A method for manufacturing a DRAM Cell of a highly integrated semiconductor device is disclosed. In order to realize a high integration using a DRAM cell, a projection having a non-etched part of a substrate is formed on the predetermined area of a substrate and a gate oxide layer and a gate electrode are formed on the side wall around the projection. A source electrode is formed on the upper part of the projection. A drain electrode is formed on the substrate that surrounds the lower part of the projection. An intermediate insulating layer is formed on the upper part of the lower substrate and the gate electrode. A charge storage electrode that is connected to the source electrode of the projection is formed in such a way that it encompasses the projection. A dielectric layer is formed on the upper part of the charge storage electrode. A plate electrode is formed on the upper part of the dielectric layer.
REFERENCES:
patent: 4920065 (1990-04-01), Chim et al.
patent: 5001078 (1991-03-01), Wada
patent: 5068200 (1991-11-01), Kang et al.
patent: 5106775 (1992-04-01), Kaga et al.
patent: 5162250 (1992-11-01), Clark
Kim Jae K.
Min Wi S.
Hyundai Electronics Industries Co,. Ltd.
Thomas Tom
LandOfFree
Method for manufacturing a dynamic random access memory cell does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing a dynamic random access memory cell, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a dynamic random access memory cell will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1705028