Method for producing an opening in a layered semiconductor struc

Details Method for producing an opening in a layered semiconductor struc Method for producing an opening in a layered semiconductor struc

1991-04-26

1993-12-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 47, 437 52, 437228, H01L 27108

Patent

active

052702367

ABSTRACT:
The method produces an opening in a layered semiconductor structure having a site intended for an opening. A place-saver is produced on the structure from a first material to be selectively etched to the structure under the first material and to a material adjacent the site. A layer of a second material to which the first material is selectively etchable, is produced over the entire surface of the structure having the place-saver. The opening is formed by at least partially removing the layer of the second material above the place-saver, and removing the place-saver by selective etching.

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K. H. Kusters et al: Journal de Physique, Coll. C4, Suppl. aun=9, Tome 49, C4-503-C4-506 (date unknown).

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