Method of making self-aligned MOSFET

Details Method of making self-aligned MOSFET Method of making self-aligned MOSFET

1994-04-26

1995-05-09

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 45, 437 46, 437909, 437984, 437931, H01L 21266, H01L 218234

Patent

active

054139490

ABSTRACT:
This invention describes a device structure and a method of forming the device structure using a polysilicon spacer formed on the edges of the gate electrode forming a gate structure with a cavity. The channel area is self aligned through this cavity. A fully overlapped Light-Doped-Drain structure is used to improve device characteristics for submicron devices. A deep boron implant region, self aligned through the gate structure, is used to improve punch through voltage.

REFERENCES:
patent: 5278441 (1994-01-01), Kang et al.
patent: 5328862 (1994-07-01), Goo

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