Method for manufacturing field effect transistor having LDD stru

Details Method for manufacturing field effect transistor having LDD stru Method for manufacturing field effect transistor having LDD stru

1992-06-24

1993-12-14

Wilczewski, Mary

Fishing, trapping, and vermin destroying

437 57, 437238, H01L 21336

Patent

active

052702332

ABSTRACT:
In a method for manufacturing a MOS transistor having the LDD structure, an N-channel MOS transistor of the LDD structure is obtained by forming a first silicon dioxide film on the side walls of a first gate electrode by utilizing a first photoresist film and a selective growth of a first LPD silicon dioxide film by liquid phase deposition, in order to reduce the number of photolithography processes. Similarly, a P-channel MOS transistor of the LDD structure is obtained by forming a second silicon dioxide film for spacer on the side walls of a second gate electrode by utilizing a second photoresist film and a selective growth of a second LDD silicon dioxide film by liquid phase deposition.

REFERENCES:
patent: 4722909 (1988-02-01), Parrillo et al.
patent: 4745086 (1988-05-01), Parrillo et al.
patent: 4753898 (1988-06-01), Parrillo et al.
patent: 4760033 (1988-07-01), Mueller
patent: 4764477 (1988-08-01), Chang et al.
patent: 4908327 (1990-03-01), Chapman
patent: 5021354 (1991-06-01), Pfiester
patent: 5087582 (1992-02-01), Campbell et al.

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