Method of manufacturing device having ferroelectric film

Details Method of manufacturing device having ferroelectric film Method of manufacturing device having ferroelectric film

1992-12-01

1993-12-14

Thomas, Tom

Fishing, trapping, and vermin destroying

437228, H01L 2170

Patent

active

052702316

ABSTRACT:
A device having a ferroelectric film formed on the surface of a semiconductor substrate is manufactured. An oxide film having a window above a channel region is formed on the surface of the semiconductor substrate. The ferroelectric film is formed so as to cover the oxide film and the like. In addition, the surface of the ferroelectric film is flattened by a resist. The resist and the ferroelectric film are then etched back, to expose the oxide film. In this state, an unnecessary portion of the oxide film is selectively removed. If the oxide film is formed into a fine pattern, it is possible to form the ferroelectric film into a fine pattern.

REFERENCES:
patent: 4655874 (1987-04-01), Marks
patent: 5077234 (1991-12-01), Scoop et al.
Mark A. Title, et al., "Reactive ion beam etching of PLZT electrooptic substrates with repeated self-aligned masking" Applied Optics, vol. 25, No., May 1, 1986, pp. 1508-1510.

Affiliated with

Also associated with

Rating

Method of manufacturing device having ferroelectric film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing device having ferroelectric film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing device having ferroelectric film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1704950