Method for fabrication of semiconductor device utilizing ion imp

Details Method for fabrication of semiconductor device utilizing ion imp Method for fabrication of semiconductor device utilizing ion imp

1992-03-26

1993-12-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

148DIG1, 148DIG10, H01L 21266

Patent

active

052702278

ABSTRACT:
An improved method for fabrication of a super-high density semiconductor device wherein ion implantation is used to eliminate defects or inhibit the occurrence of growth of defects in the semiconductor device. Ions of high concentration are implanted into a monocrystal semiconductor region in which principal elements such as bipolar element and MOS element are formed, by using a mask pattern covering the semiconductor region and at a largely inclined implantation angle equal to or of more than 20 degrees. This provides for formation of amorphous regions 170A, 170B extending sufficiently into areas beneath the ends of the mask. The amorphous regions are recrystallized by heat treatment, thereby inhibiting the growth of a corner defect known as "voids 21" which has often occurred at edges of amorphous regions 170A, 170B in the conventional method. Thus, a device which is less liable to electrical leaks is provided.

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