Method of making a resonant tunneling semiconductor device

Details Method of making a resonant tunneling semiconductor device Method of making a resonant tunneling semiconductor device

1992-02-21

1993-12-14

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437129, 437133, 257 9, 257 14, 257 19, 257 21, 257 25, 257104, H01L 21265

Patent

active

052702251

ABSTRACT:
A resonant tunneling semiconductor device having two large bandgap barrier layers (12, 14) separated by a quantum well (13) is provided. The two barriers (12,14) and the quantum well (13) are formed between first and second semiconductor layers (11, 16) of a first conductivity type. A monolayer (17) of material having a different bandgap than the quantum well material is provided in the quantum well thereby lowering the ground state energy level of the quantum well. Alternatively, monolayers (18, 19) having a different bandgap than that of the first and second semiconductor layers (11, 16) are formed in the first and second semiconductor layers, respectively, outside of the quantum well (13).

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Seabaugh et al. Room Temperature Hot Electron Transistors with InAs-Notched Resonant-Tunneling-Diode Injector, Japanese Journal of Applied Physics, vol. 30, No. 5, May, 1991, pp. 921-925.

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