Method of fabricating high quantum efficiency solid state sensor

Details Method of fabricating high quantum efficiency solid state sensor Method of fabricating high quantum efficiency solid state sensor

1992-11-05

1993-12-14

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 5, 437 53, 437974, 148DIG135, H01L 3118, H01L 2170

Patent

active

052702219

ABSTRACT:
A method for fabricating thinned, back-illuminated, solid state image sensors 10 includes steps of positively doping a bottom surface 22 of a top semiconductor wafer 24, and bonding the bottom surface 22 of the top semiconductor wafer 24 to a top surface 26 of a bottom semiconductor wafer 28 with a silicon dioxide passivation layer 34 in between. The top wafer 24 is thinned and an insulating layer of silicon dioxide 36 and a polysilicon gate structure 38 are formed thereover. Individual dies 40 are then formed, which are bonded to a substrate 42 along each pixel face. The bottom semiconductor wafer layer 28 is etched away to expose the silicon dioxide passivation layer 34, which acts to protect the thinned top wafer layer 24. The dies 40 are then etched to expose bonding pads within the gate structure 38, and sized to create thinned, back-illuminated, solid state image sensors 10.

REFERENCES:
patent: 4774196 (1988-09-01), Blanchard
patent: 5013681 (1991-05-01), Godbey et al.
patent: 5162251 (1992-11-01), Poole et al.

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