Plasma processing apparatus

Details Plasma processing apparatus Plasma processing apparatus

1993-06-11

1995-05-09

Breneman, R. Bruce

Adhesive bonding and miscellaneous chemical manufacture

Differential fluid etching apparatus

With microwave gas energizing means

118719, 118723FE, 20429837, 216 67, H01L 2100

Patent

active

054136636

ABSTRACT:
A wafer plasma-etching apparatus includes electron generating, accelerating and processing chambers. Electron are drawn out of plasma generated in the electron generating chamber, accelerated in the accelerating chamber and introduced, as an electron beam, into the process chamber. A semiconductor wafer is positioned flat and parallel to an electron introducing direction in the process chamber. Process gas is introduced into the process chamber and excited into plasma by the electron beam. The wafer is etched by this plasma. Magnetic field is formed at the entrance of the process chamber such that the electron beam is divided to both sides of its extended center line in a horizontal plane and compressed flat in a vertical plane. The magnetic field is also formed such that the electron beam is carried in the horizontal direction at a position where the wafer is arranged in the process chamber. A sheet-like plasma region having a higher density of ions and a more uniform distribution thereof can be thus formed all over the surface of the wafer.

REFERENCES:
patent: 4509451 (1985-04-01), Collins et al.

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