Semiconductor device and method for manufacturing the same

Details Semiconductor device and method for manufacturing the same Semiconductor device and method for manufacturing the same

1990-07-12

1991-09-24

Hille, Rolf

357 67, H01L 2946, H01L 2354

Patent

active

050518127

ABSTRACT:
A semiconductor device having a high reliability wiring conductor structure applicable to DRAMs and SRAMs.
The semiconductor device of the present invention is characterized by comprising a first wiring conductor film wherein a specific resistance is 5.about.15.mu..OMEGA.cm and an allowable current density is 1.times.10.sup.6 .about.1.times.10.sup.8 A/cm.sup.2 ; a second wiring conductor film having a laminated layer structure formed of a layer of high fusing point and low resistance material and a layer of an Al based alloy; and a plug composed of a high fusing point and low resistance material, electrically connecting to the first wiring conductor film and the second wiring conductor film. Thus, a semiconductor device showing almost no increase in electrical resistance in a wiring conductor film due to electromigration even after subjecting to a large current is provided.

REFERENCES:
patent: 4543592 (1985-09-01), Itsumi et al.
patent: 4556897 (1985-12-01), Yorikane et al.
patent: 4582563 (1986-04-01), Hazuki et al.
patent: 4862243 (1989-08-01), Welch et al.
patent: 4948755 (1990-08-01), Mo

Affiliated with

Also associated with

Rating

Semiconductor device and method for manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Semiconductor device and method for manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Semiconductor device and method for manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1700755