Patent
1990-05-29
1991-09-24
Wojciechowicz, Edward J.
357 237, 357 43, 357 46, H01L 2702
Patent
active
050518089
ABSTRACT:
A semiconductor device having the function of a conductivity-modulation type MOSFET with improved switching speed is disclosed, which device has low inductance of wirings connecting individual elements of the device. The elements forming the semiconductor device are connected by short, deposited wirings in the silicon substrate or on the silicon substrate, thereby minimizing the inductance of the wiring.
REFERENCES:
patent: 4901124 (1990-02-01), Seki
Kumagai Naoki
Saito Akira
Fuji Electric & Co., Ltd.
Wojciechowicz Edward J.
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