Topography simulation method

Details Topography simulation method Topography simulation method

1989-09-21

1991-12-03

Cangialosi, Salvatore

Boots, shoes, and leggings

364488, G06F 1572

Patent

active

050704699

ABSTRACT:
A topography simulation method for simulating a surface topography of a material object material while a surface of material object is being processed, as by etching or a deposition, includes the steps of dividing a region to be analyzed, in a surface including the advancing direction of processing, into a plurality of regions in a grid in accordance with the surface topography of the material object by approximating the movement of the processed surface of the material object as the movement of an equi-concentration surface determined by the diffusion of particles, establishing diffusion coefficients for the respective regions on the basis of the surface processing velocity, calculating equi-concentration surfaces by the Diffusion equation, and assembling the obtained equi-concentration surfaces to produce a three-dimensional surface topography.

REFERENCES:
patent: 4868770 (1989-09-01), Smith et al.
patent: 4868771 (1989-09-01), Quick et al.
patent: 4879667 (1989-11-01), Gorski et al.
patent: 4888583 (1989-12-01), Ligocki et al.
Shephard: Finite Element Modeling Within an Integrated Geometric Modeling Environment, Part I: Mesh Generation Engineering with Computers. Springer 1985.
Oldham et al., "A General Simulator . . . Lithography", IEEE Transactions of Electron Devices, vol. ED-26, No. 4, Apr. 1979, pp. 717-722.
Hirai et al., "Three Dimensional Process . . . Effects", IEEE Catalogue, Number 87th 0189-01, 1987, pp. 15-16.
Matsuzawa et al., "Three-Dimensionsal Photoresist . . . Surfaces", IEEE Transactions on Electron Devices, vol. Ed-32, No. 9, Sep. 1985, pp. 1781-1783.

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