Solid state image sensing device having an overflow drain struct

Details Solid state image sensing device having an overflow drain struct Solid state image sensing device having an overflow drain struct

1990-04-06

1991-09-24

James, Andrew J.

Facsimile and static presentation processing

Facsimile

Specific signal processing circuitry

357 30, 357 49, 357 55, 35821319, H01L 2978, H01L 2714, H01L 2906

Patent

active

050517988

ABSTRACT:
A solid-state image sensing device has an overflow drain structure for purging superfluous charges. The overflow drain structure includes a gate electrode (34), channel regions (35), and a drain region (32) formed inside each groove (26) formed on a main surface of a semiconductor substrate (6). Optoelectro transducer (4) are formed on main surface regions of the semiconductor substrate continuous with each groove. The drain region is formed on side walls and a bottom wall of each groove by oblique ion implantation. The overflow drain structure formed inside the groove occupies a reduced area on the main surface of the semiconductor substrate and increases its opening ratio.

REFERENCES:
patent: 4760273 (1988-07-01), Kimata
patent: 4814848 (1989-03-01), Akimoto et al.
patent: 4851887 (1989-07-01), Hagiwara
C. H. Seguin, "Blooming Suppression in Charge Coupled Area Imaging Devices," The Bell System Technical Journal, Oct. 1972, pp. 1923-1926.

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