Semiconductor device comprising unidimensional doping conductors

Details Semiconductor device comprising unidimensional doping conductors Semiconductor device comprising unidimensional doping conductors

1991-04-19

1991-12-03

James, Andrew J.

357 232, 357 41, 357 55, 357 63, 357 88, H01L 2904, H01L 29167, H01L 2920

Patent

active

050703870

ABSTRACT:
The invention relates to a semiconductor device having a semiconductor substrate, on which a semiconductor layer is provided, which includes sunken or buried strip-shaped conducting regions, which have strip-shaped subregions, in which doping elements are present. Semiconductor devices having such so-called quasi unidimensional conductors constitute potentially important parts of electronic circuits or components. According to the invention, the strip-shaped conducting regions and the strip-shaped subregions are located with a side facing the substrate substantially in one plane, which is a vicinal plane of a major crystal surface of the semiconductor body, of which the semiconductor device forms part. The subregions can also have a very small width and thickness of about 0.3 to 2 nm and can be manufactured in a comparatively simple manner.

REFERENCES:
patent: 4591889 (1986-05-01), Gossard et al.
patent: 4872046 (1989-10-01), Morkoc et al.

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