Thin-film transistor matrix for active matrix display panel with

Details Thin-film transistor matrix for active matrix display panel with Thin-film transistor matrix for active matrix display panel with

1990-06-19

1991-12-03

Mintel, William

Fishing, trapping, and vermin destroying

357 2, 357 4, 357 67, 437189, 437201, 359 59, 359 87, H01L 2978

Patent

active

050703790

ABSTRACT:
A TFT matrix for an active matrix display panel has a plurality of TFTs arranged in rows and columns to form a matrix array. Each of the TFT has a control electrode on a dielectric substrate, a first insulator film formed on the control electrode, a second insulator film formed on the first insulator film, a-Si semiconductor layer formed on the second insulator film, and first and second (drain and source) electrodes formed on the a-Si semiconductor layer. The matrix has a plurality of transparent electrodes that contact the second electrodes, row interconnection layers interconnecting the control electrodes of the TFTs of the respective rows, and column interconnection layers interconnecting the first electrodes of the TFTs of the respective columns. The control electrodes and the row interconnection layers (gate electrodes) are made of an alloy of tantalum with tungsten, nickel, cobalt, rhodium, or iridium. The first insulator is formed by anodizing the surface of the gate electrode. The gate electrode has low resistance, improving the quality of the display without impairing insulation performance.

REFERENCES:
patent: 4821092 (1989-04-01), Noguchi
patent: 4843438 (1989-06-01), Koden et al.
patent: 4905066 (1990-02-01), Dohjo et al.
12-in. Full-Color a-Si:H TFT-LCD with Pixel Electrode Buried in Gate Insulator, Hiroaki Moriyama et al., SID 89 Digest, pp. 144-147, 1989.

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