Semiconductor device and method of manufacturing the same

Details Semiconductor device and method of manufacturing the same Semiconductor device and method of manufacturing the same

1990-10-16

1991-12-03

Wojciechowicz, Edward J.

357 238, 357 34, 357 41, 357 46, 357 58, 357 86, H01L 2978

Patent

active

050703773

ABSTRACT:
An N drift region (42) is provided in its surface with a P.sup.+ well region (43) of a square ring shape and a P region (51) formed in the center of the square ring. The P region (51) is relatively low in impurity concentration and relatively small in thickness while the P.sup.+ well region (43) is relatively high in impurity concentration and relatively large in thickness. The P region (51) of low impurity concentration is lower in built-in voltage than P.sup.+ well region (43) of high impurity concentration, so that most part of a forward current of a diode consisting of the N drift region (42) and the P.sup.+ well and P regions (43, 51) can flow through the P region (51). Because of the low impurity concentration and small thickness of the P region (51), the rate of minority carriers in the forward current is low. Thus, a reverse recovery time of the diode can be shortened.

REFERENCES:
patent: 3697827 (1972-10-01), Simon
patent: 4851721 (1989-07-01), Okitaka
patent: 4882717 (1989-11-01), Hayakawa et al.
Shimizu et al.--IEEE Transactions on Electron Devices--vol. Ed-31, No. 9, Sep. 1984.
"High-Speed Low-Loss p--n Diode Having a Channel Structure", vol. Ed-31, No. 9, IEEE Transactions of Electron Devices, 09/84, pp. 1314-1319.
"High Current Characteristics of Asymmetrical p--i--n Diodes Having Low Forward Voltage Drops", vol. Ed-23, No. 8, IEEE Transactions on Electron Devices, 08/76, pp. 945-949.

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