Method of fabricating specimen for analyzing defects of semicond

Details Method of fabricating specimen for analyzing defects of semicond Method of fabricating specimen for analyzing defects of semicond

1996-07-19

1998-11-24

Nuzzolillo, M.

Etching a substrate: processes

Nongaseous phase etching of substrate

Etching inorganic substrate

216 53, 216 83, 216 95, 438691, 438745, 438749, 438750, C25F 300

Patent

active

058402055

ABSTRACT:
A method of fabricating a specimen for analyzing defects of a semiconductor device is disclosed. The method includes the steps of: cutting a wafer to be adjacent to a defective portion that exists in a patterned layer formed on a substrate; molding the first specimen with a resin; grinding the substrate of the first specimen with a predetermined slope; and etching the ground face to expose the defective layer, wherein the wafer includes a semiconductor substrate and patterned layers where memory devices are formed on the semiconductor substrate.

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patent: 4978421 (1990-12-01), Bassous et al.
patent: 5131752 (1992-07-01), Yu et al.
patent: 5191213 (1993-03-01), Ahmed et al.
patent: 5214283 (1993-05-01), Le
patent: 5498871 (1996-03-01), Koo et al.
Grant, J., Hackh's Chemical Dictionary, p. 434, Dec. 31, 1972.

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