1974-06-12
1976-06-15
Wojciechowicz, Edward J.
H01L 2948, H01L 2956, H01L 2964
Patent
active
039640841
ABSTRACT:
A Schottky barrier contact includes a thin layer of high carrier concentration impurities ion implanted over the contact surface of the semiconductor. This reduces the electronic barrier height, increases the tunneling component, and thus reduces the forward-bias turn-on voltage of the diode. The implanted layer has a carrier concentration at least ten times that of the semiconductor substrate, and a thickness smaller than the width of the inherent depletion region resulting from the internally generated electric field at the metal-semiconductor interface. An implanted layer of the opposite conductivity type raises the barrier height.
REFERENCES:
patent: 3739243 (1973-06-01), Semichon et al.
patent: 3767984 (1973-10-01), Shinoda et al.
patent: 3808477 (1974-04-01), Swank
Appl. Phys. Letters, vol. 24, No. 8, 15 Apr. 1974, Shannon.
Andrews, Jr. John Marshall
Ryder Robert Morgan
Sze Simon Min
Anderson R. B.
Bell Telephone Laboratories Incorporated
Canepa L. C.
Wojciechowicz Edward J.
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