Method of manufacturing semiconductor device

Details Method of manufacturing semiconductor device Method of manufacturing semiconductor device

1974-08-08

1976-01-20

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148175, 357 49, H01L 2122

Patent

active

039335402

ABSTRACT:
A method of manufacturing bipolar transistor elements in a semiconductor integrated circuit isolated by a silicon oxide film, comprises the steps of forming a semiconductor layer of one conductivity type on a semiconductor substrate of the opposite conductivity type, in which each collector region of the one conductivity type is formed, diffusing an impurity of the opposite conductivity type for each base region into the surface of the semiconductor layer of the one conductivity type, performing oxidation down to the surface of the semiconductor substrate by employing an oxidation-resisting film as a mask, to thereby form an isolating silicon oxide film, and diffusing an impurity of the one conductivity type for each emitter region into a selected part of the surface of the diffused semiconductor layer of the opposite conductivity type, whereby the base width of the bipolar transistor elements can be narrowed.

REFERENCES:
patent: 3648125 (1972-03-01), Peltzer
patent: 3649386 (1972-03-01), Murphy
patent: 3659160 (1972-04-01), Sloan, Jr. et al.
patent: 3752711 (1973-08-01), Kooi et al.

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