Light emitting diode

Details Light emitting diode Light emitting diode

Filed on

1979-03-06

Date issued

1980-11-11

Examiner

Edlow, Martin H.

Patent Class

Radiant energy

SubClass

Ionic separation or analysis

SubSubClass

Static field-type ion path-bending selecting means

Other Related Categories

357 30, 250227, 250551, H01L 3300

Type

Patent

Status

active

Patent number

042336147

Description

ABSTRACT:
A light emitting diode includes a substrate having a body of single crystalline semiconductor material, preferably a Group III-V compound or alloy thereof, on a surface of the substrate. The body includes a window layer directly on the substrate and one or more other layers on the window layer. The layers of the body are of appropriate conductivety types to form a recombination region in which light can be generated. The substrate has an opening therethrough to the window layer. The window layer is of a material which is substantially transparent to the light generated in the recombination region and is of a thickness, 15 to 30 microns, to provide rigidity to the diode.

REFERENCES:
patent: 3968564 (1976-07-01), Springthorpe
patent: 4152044 (1979-05-01), Lui
patent: 4152713 (1979-05-01), Copeland
patent: 4167016 (1979-09-01), Hung
Mathews et al., Electronics & Power, Sep. 1976, p. 586.

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