Compound semiconductor wafer

Details Compound semiconductor wafer Compound semiconductor wafer

1978-08-31

1980-11-11

Edlow, Martin H.

357 17, H01L 3300

Patent

active

042336139

ABSTRACT:
A compound semiconductor wafer having a substrate of a IV-group element semiconductor of a predetermined conductivity type, an epitaxial layer formed by epitaxially growing on the substrate a compound semiconductor having the same conductivity type as the substrate by an ion beam deposition process or a cluster ion beam deposition process, and a compound semiconductor layer of a conductivity type opposite to that of the epitaxial layer and formed on the epitaxial layer so as to form a PN junction with the epitaxial layer.

REFERENCES:
patent: 4115164 (1978-09-01), Jager
patent: 4120706 (1978-10-01), Mason

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