Method of making electroluminescent semiconductor devices

Details Method of making electroluminescent semiconductor devices Method of making electroluminescent semiconductor devices

1974-11-18

1976-06-15

Ozaki, G.

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

148172, 252 623GA, 331 945H, 357 16, H01L 738

Patent

active

039635368

ABSTRACT:
In making electroluminescent devices comprised of layers of semiconductor material of different conductivity types, the layers are formed by a liquid phase epitaxy process in which the layer growth rate is accelerated by means of rapid cooling. The rapid cooling during deposition results in a device having resistance to the gradual degradation of light emission.

REFERENCES:
patent: 3537029 (1970-10-01), Kressel et al.
patent: 3560275 (1971-02-01), Kressel et al.
patent: 3647579 (1972-03-01), Ladany
patent: 3676228 (1972-07-01), Sakurai et al.
patent: 3713883 (1973-01-01), Lien
patent: 3752713 (1973-08-01), Sakuta et al.
patent: 3783825 (1974-01-01), Kobayashi et al.

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