Aluminum bump, reworkable bump, and titanium nitride structure f

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

357 67, 357 69, H01L 2348, H01L 2946, H01L 2962

Patent

active

051344602

ABSTRACT:
A semiconductor chip carrying integrated circuits has lead lines terminating in conductive terminal pads exposed to the exterior through openings in a passivation layer. The pads include pedestals or bumps extending up from them. Each of the pedestals includes a thin metallic adhesion layer deposited on the pad. A thick metallic layer of aluminum or an alloy of aluminum is deposited upon said thin metallic adhesion layer. The thick metallic layer includes at least one metal selected from the group consisting of aluminum, aluminum plus a small percentage of Cu, Ni, Si, or Fe. Several other alternative metals can be added to aluminum to form an alloy. The thick metallic layer forms the bulk of the height of the pedestal. An adhesion layer is deposited on the bump of aluminum composed of a thin film of titanium or chromium. A barrier layer is deposited on the adhesion layer composed of copper, nickel, platinum, palladium or cobalt. A noble metal consisting of gold, palladium, or platinum is deposited on the barrier layer. In a variation of the top surface, a thick cap of a reworkable bonding metal is deposited above the metallic bump as the top surface of said bump. The bump can be composed of a number of metals such as gold, copper, nickel and aluminum in this case with aluminum being preferred. In place of the adhesion and barrier metals one can employ a layer of titanium nitride deposited on said thick layer of metal.

REFERENCES:
patent: 3531852 (1970-10-01), Slemmons et al.
patent: 3821785 (1974-06-01), Rose
patent: 3886585 (1975-05-01), Konantz et al.
patent: 4000842 (1977-01-01), Burns
patent: 4263606 (1981-04-01), Yorikane
patent: 4551912 (1985-11-01), Marks et al.
patent: 4600600 (1986-07-01), Pammer et al.
patent: 4609936 (1986-09-01), Scharr et al.
Liu, Tien-Shih et al., "Metallurgical Considerations in Tin-Gold Inner Lead Bonding Technology", Int. J. for Hybrid Microelectronics, vol. (12), 1978, pp. 69-76.
Lassus, Marc, "Semiconductors with Bump Contacts . . .", Microelectronique, Jan. 12, 1976, pp. 23-25.
Castrucci et al., IBM Tech. Discl. Bulletin, vol. 9, No. 12, May 1967, p. 1805.
Gniewek et al., IBM Tech. Discl. Bulletin, vol. 13, No. 5, Oct. 1970, p. 1124.
Wittmer, Appl. Physics Lett. 37(6), Sep. 15, 1980, pp. 540-542.
Electronique & Microelectronique, No. 229, Dec. 1, 1976, pp. 23-25, M. Lassus: "Les semi-conducteurs; a protuberances".

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Aluminum bump, reworkable bump, and titanium nitride structure f does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Aluminum bump, reworkable bump, and titanium nitride structure f, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Aluminum bump, reworkable bump, and titanium nitride structure f will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1690013

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.