1991-01-22
1992-07-28
Hille, Rolf
357 41, H01L 2978
Patent
active
051344483
ABSTRACT:
A MOSFET having a back-side source contact and top-side gate and drain contacts is provided by a structure comprising superposed N.sup.+, N-, P-, N.sup.+ regions arranged between top and bottom surfaces of the semiconductor die. In a preferred implementation, two trenches are etched from the top surface to the P-, N.sup.+ interface. A buried P-, N.sup.+ short is provided in one trench and a gate dielectric and gate electrode are provided over the sidewall P- region exposed in the other trench. This creates a vertical MOSFET in which the N.sup.+ substrate forms the source region shorted to the P- body region in which the channel is created by the gate. Superior performance is obtained in RF grounded-source circuit applications.
REFERENCES:
patent: 4568958 (1986-02-01), Baliga
patent: 4755867 (1988-07-01), Cheng
patent: 5021845 (1991-06-01), Hashimoto
patent: 5023196 (1991-06-01), Johnsen et al.
Johnsen Robert J.
Sanders Paul W.
Barbee Joe E.
Handy Robert M.
Hille Rolf
Loke Steven
Motorola Inc.
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