Method of forming a phosphorus doped silicon film

Details Method of forming a phosphorus doped silicon film Method of forming a phosphorus doped silicon film

1991-10-15

1993-07-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437225, 437228, 118620, 118715, 427587, 427588, H01L 2100, H01L 2102, H01L 2120, H01L 21205

Patent

active

052253783

ABSTRACT:
Phosphor-doped silicon films are simultaneously formed on semiconductor wafers, respectively. The semiconductor wafers are contained in a reaction tube whose interior temperature is controlled to 500.degree. C. Si.sub.2 H.sub.6 and PH.sub.3 are introduced into the reaction tube. PH.sub.3 is preheated to 400.degree. C. in a gas activating unit before being introduced into the reaction tube. By virtue of the preheating, the thermal decomposition of PH.sub.3 carried out in the reaction tube is accelerated.

REFERENCES:
patent: 4400409 (1983-08-01), Izu et al.
patent: 4461783 (1984-07-01), Yamazaki
patent: 4716852 (1988-01-01), Tsujii et al.
patent: 4818563 (1989-04-01), Ishihara et al.
patent: 4818711 (1989-04-01), Choksi et al.
patent: 5013675 (1991-05-01), Shen et al.

Affiliated with

Also associated with

Rating

Method of forming a phosphorus doped silicon film does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of forming a phosphorus doped silicon film, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a phosphorus doped silicon film will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1689479