Method for etching tantalum oxide

Details Method for etching tantalum oxide Method for etching tantalum oxide

1998-12-29

2000-03-14

Breneman, Bruce

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

438717, 216 24, 216 51, C23F 100, C23F 112

Patent

active

060372680

ABSTRACT:
The invention is a method of fabricating a device which includes the step of etching a layer of tantalum oxide or niobium oxide. A material comprising chlorine and a material comprising oxygen are applied to the layer and energy is added to the layer in the form of heat or ion bombardment.

REFERENCES:
patent: 5032220 (1991-07-01), Yamamoto et al.
patent: 5254202 (1993-10-01), Kaplan
patent: 5637153 (1997-06-01), Niino et al.

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