Laser formation of graded junction devices

Details Laser formation of graded junction devices Laser formation of graded junction devices

1992-03-17

1993-07-06

Thomas, Tom

Fishing, trapping, and vermin destroying

437174, H01L 21268

Patent

active

052253716

ABSTRACT:
A method for fabricating graded heterojunction electronic devices uses laser melting and recrystallization of layered films to create an epitaxial alloy heterojunction. Layering an appropriately doped polysilicon film over a germanium film that has been deposited upon a base region allows the laser melting and recrystallization thereof to create a graded epitaxial silicon/germanium alloy heterojunction. Other film materials could be selected for other graded heterojunctions. The method provides for sufficient device design flexibility including deeper junction formation and reduces the problems associated with contamination.

REFERENCES:
patent: 3940289 (1976-02-01), Marquardt et al.
patent: 4203781 (1980-05-01), Miller
patent: 4343832 (1982-08-01), Smith et al.
patent: 4364778 (1982-12-01), Leamy et al.
patent: 4407060 (1983-10-01), Sakurai
patent: 4771010 (1988-09-01), Epler et al.
patent: 5114876 (1992-05-01), Weiner
G. L. Patton et al "Silicon-Germanium-base Heterojunction Bipolar Transiss by Molecular Beam Epitaxy" IEEE Electron Dev. Lett. vol. 9, pp. 165-167 (Apr. 1988).
H. Kroemer "Two Integral Relations Returning to the Electron Transport through a Bipolar Transistors with a Nonuniform Energy Gap in the Base Region" Solid State Electron, vol. 28, pp. 1101-1103 (Nov. 1985).
C. A. King et al "Si Si6e Heterojunction Bipolar Transistors Produced by Limited Reaction Processing" IEEE Electron Dev. Lett. vol. 10 (Feb. 1989) pp. 52-54.
J. D. Cressler et al., "Sub-30ps ECL Circuit Operation at Liquid Nitrogen Temperature Using Self-aligned Epitaxial Side-base Bipolar Transistors" IEEE Electron Device Lett., vol. 12, pp. 166-168, (Apr. 1991).
J. R. Abelson, et al, "Epitaxial Ge.sub.x Si.sub.1-x /Si (100) Structures Produced by Pulsed Laser Mixing of Evaporated Ge on Si(100) Substrates" Appl. Phys. Lett. vol. 52, pp. 230-231 Jan. 1988.
G. L. Patton et al. "75 Ghz f.sub.t SiGe-Base Heterojunction Bipolar Transistors" IEEE Electron Dev. Lett. vol. 11 (Apr. 1990) pp. 171-173.
K. H. Weiner et al "Emitter and base fabrication in advanced bipolar transistors using gas immersion laser doping" Proceedings of the 1988 Bipolar Circuits and Technology Meeting, IEEE (1988) (abs).
T. Tatsumi et al "Si/Ge.sub.3 Si..sub.7 /Si Heterojunction Bipolar Transistor Made with Si Molecular Beam Epitaxy" Appl. Phys. Lett. vol. 52 pp. 895-896 (Mar. 1988).
G. L. Patton et al "Graded-SiGe-base, Poly-emitter Heterojunction Bipolar Transistors" IEEE Electron Dev. Lett. vol. 10 pp. 534-536 (Dec. 1989).

Affiliated with

Also associated with

Rating

Laser formation of graded junction devices does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Laser formation of graded junction devices, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Laser formation of graded junction devices will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1689320