Method of diffusing P type impurity

Details Method of diffusing P type impurity Method of diffusing P type impurity

1991-10-01

1993-07-06

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 22, 437129, 437160, H01L 21225

Patent

active

052253708

ABSTRACT:
A method of diffusing a P type impurity into a semiconductor substrate includes selectively implanting ions of a first P type impurity into a semiconductor substrate and thermally diffusing a second P type impurity into the semiconductor substrate at least in a region where the first P type impurity ions are implanted. The diffusion speed of the P type impurity is increased in the ion implantation region whereby a P type impurity diffusion region which nearly corresponds in extent to the ion implantation region is obtained. The P type diffusion region can be precisely produced with a high dopant impurity concentration.

REFERENCES:
patent: 3901738 (1975-08-01), Hunsperger et al.
patent: 4280858 (1981-07-01), Van Opdorp et al.
patent: 5086004 (1992-02-01), Quintana
patent: 5108948 (1992-04-01), Murakami et al.
Deal et al, "Diffusion of Implanted Beryllium in n- and p-type GaAs", Applied Physics Letters, vol. 55, No. 19, Nov. 1989, pp. 1990-1992.

Affiliated with

Also associated with

Rating

Method of diffusing P type impurity does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of diffusing P type impurity, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of diffusing P type impurity will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1689268