Method for making a contact structure for a polysilicon filled t

Details Method for making a contact structure for a polysilicon filled t Method for making a contact structure for a polysilicon filled t

1997-04-23

2000-03-14

Bowers, Charles

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

438270, 438424, H01L 21302

Patent

active

060372397

ABSTRACT:
A method for dissipating accumulated charge in a trench isolation structure, comprising the steps of: forming a contact region of an area having a cross section greater than the width of the isolation structure; and coupling the isolation structure to a charge dissipation means.

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patent: 5459101 (1995-10-01), Fujii et al.
patent: 5480837 (1996-01-01), Liaw et al.
patent: 5684319 (1997-11-01), Hebert
patent: 5712185 (1998-01-01), Tsai et al.
Stanley Wolf Silicon Processing For The VLSI Era vol. I Lattice Press p. 167, 1986.

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