Static information storage and retrieval – Floating gate – Particular biasing
Patent
1997-11-07
1999-06-08
Nelms, David
Static information storage and retrieval
Floating gate
Particular biasing
3651852, 36518503, 36518907, 327 51, G11C 1606
Patent
active
059109149
ABSTRACT:
A sensing circuit for sensing the multiple states of a selected memory cell of a floating gate memory device is disclosed. The sensing circuit has a first voltage amplifier which generates a first output voltage, and a plurality of current amplifiers which receive the first output voltage and generate a plurality of first output currents in response thereto. The circuit also comprises a dummy cell, a second voltage amplifier connected thereto for generating a second output voltage. A second current amplifier receives the second output voltage and generates a plurality of second output currents in response thereto. Each of a plurality of inverters receives one of the first and one of the second output currents, and generates an output. The output of the plurality of invertors are supplied to a decoder to generate a decoded signal representative of the plurality of states of the selected memory cell.
REFERENCES:
patent: 4223394 (1980-09-01), Pathak et al.
patent: 5262984 (1993-11-01), Noguchi et al.
patent: 5386158 (1995-01-01), Wang
patent: 5394362 (1995-02-01), Banks
patent: 5550772 (1996-08-01), Gill
patent: 5642312 (1997-06-01), Harari
Nelms David
Nguyen Tuan T.
Silicon Storage Technology, Inc.
Yin Ronald L.
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