Coherent light generators – Particular active media – Semiconductor
Patent
1996-08-09
2000-02-08
Sanghavi, Hemang
Coherent light generators
Particular active media
Semiconductor
372 45, H01S 319
Patent
active
060234849
ABSTRACT:
The semiconductor laser device of the invention includes: an n-type semiconductor and a semiconductor multi-layer structure formed on the n-type semiconductor. The semiconductor multi-layer structure includes: an active layer; an n-type first cladding layer and a p-type second cladding layer which are disposed so as to sandwich the active layer therebetween; an n-type current/light confinement layer having a stripe-shaped groove portion for injecting a current into a selected region of the active layer; and a p-type third cladding layer formed so as to bury the stripe-shaped groove portion of the n-type current/light confinement layer. In the semiconductor laser device, the current/light confinement layer contains Si as a dopant and the n-type first cladding layer contains substantially no Si as a dopant.
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Matsumoto Mitsuhiro
Suyama Takahiro
Sanghavi Hemang
Sharp Kabushiki Kaisha
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